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| GaAs MMICs GN1010 GN1010 GaAs N-Channel MES IC For high-output high-gain amplification 0.650.15 Unit : mm 2.8 -0.3 +0.2 +0.2 1.5 -0.3 0.650.15 s Features 0.95 q q q General-use wide-band amplifier 2.90.2 0.5R 1.90.2 4 1 0.95 Low noise With bandwidth control pin 3 2 1.1 -0.1 s Absolute Maximum Ratings (Ta = 25C) Parameter Power supply voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGS ID IG PD Tch Tstg Rating 6 -4 45 3 200 150 - 55 to +150 Unit V V mA mA mW C C 1 : Source 2 : Drain 3:C 4 : Gate Mini Type Package (4-pin) s Equivalent Circuit 2 3 4 0 to 0.1 0.40.2 0.8 1 s Electrical Characteristics (Ta = 25C) Parameter Drain current Noise figure Power gain IdB compression output Symbol IDD * 1 NF * 2 PG * 2 PO * 2 VDS= 3V VDS= 3V, f= 0.5GHz VDS= 3V, f=1.8GHz VDS= 3V, f= 0.5GHz VDS= 3V, f=1.8GHz VDS= 3V, f= 0.5GHz VDS= 3V, f=1.8GHz 5 8 Condition Min 5 Typ 30 2 10 9 15 Max 45 3 Unit mA dB dB dBm *1 IDD rank classification Rank IDD(mA) P 5 to 20 Q 15 to 30 R 25 to 45 *2 NF, PG, PO test circuit VD C = 1000 pF Cc = 200 pF Cf = 27 pF Cc C C Cf Cc G S 0.16 -0.06 +0.2 +0.1 0.4 -0.05 +0.1 GaAs MMICs GN1010 PG, NF - f 12 Noise figure NF (dB) Forward transfer gain, Reverse transfer gain | S21 | , | S12 | (dB) | S21 |, | S12 | - f 30 Forward transfer gain, Reverse transfer gain | S11 | , | S22 | (dB) | S11 |, | S22 | - f 20 VDD=3V Ta=25C 10 VDD=3V Ta=25C 10 (dB) VDD=3V Ta=25C 20 | S21 | 10 PG 8 0 | S22 | -10 PG Power gain 6 NF 4 0 -10 | S12 | -20 -20 | S11 | -30 2 0 0.1 0.3 1 f 3 (GHz) 10 -30 10 30 100 300 1000 3000 10000 -40 10 30 100 300 1000 3000 10000 (MHz) Frequency Frequency f (MHz) Frequency f NF, PG - f 20 VDD=3V Cf=27pF Pout, IM2, IM3 - Pin 40 VDD=3V Cf=27pF 20 I.P Noise figure NF (dB) 3 PG 2 NF 1 10 Power gain PG (dB) 0 Pout, IM2, IM3 (dBm) Pout -20 0 0.1 0.3 0.5 1.0 2.0 Frequency f (GHz) 0 -40 IM2 IM3 -60 -90MHz -500MHz -1800MHz -80 -40 -20 0 Pin (dBm) 20 |
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